Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 77
For PMDA - BPDA / PDĄ , Young's modulus was 9.6 GPa for the alternating copolyimide and 9.1 GPa for the random copolyimide . As presented in Table I , for a chosen copolyimide system the alternating copolyimide exhibited a relatively ...
For PMDA - BPDA / PDĄ , Young's modulus was 9.6 GPa for the alternating copolyimide and 9.1 GPa for the random copolyimide . As presented in Table I , for a chosen copolyimide system the alternating copolyimide exhibited a relatively ...
Page 131
The elastic case with 120 GPa modulus and thermal expansion coefficient of 1 ppm / ° C approximates current 1 materials . The entire structure is assumed to be stress - free at 400 ° C ( a typical dielectric deposition temperature ) and ...
The elastic case with 120 GPa modulus and thermal expansion coefficient of 1 ppm / ° C approximates current 1 materials . The entire structure is assumed to be stress - free at 400 ° C ( a typical dielectric deposition temperature ) and ...
Page 142
At higher temperature , the Young's modulus reduces significantly and the elongation at break ( EAB ) is substantially higher ( see Table 1 ) . Young's modulus of various electronic materials are listed in Table 3 for comparison purpose ...
At higher temperature , the Young's modulus reduces significantly and the elongation at break ( EAB ) is substantially higher ( see Table 1 ) . Young's modulus of various electronic materials are listed in Table 3 for comparison purpose ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |