Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 77
For PMDA - BPDA / PDĄ , Young ' s modulus was 9 . 6 GPa for the alternating
copolyimide and 9 . 1 GPa for the random copolyimide . As presented in Table I ,
for a chosen copolyimide system the alternating copolyimide exhibited a
relatively ...
For PMDA - BPDA / PDĄ , Young ' s modulus was 9 . 6 GPa for the alternating
copolyimide and 9 . 1 GPa for the random copolyimide . As presented in Table I ,
for a chosen copolyimide system the alternating copolyimide exhibited a
relatively ...
Page 131
6 , 30 and 60 ppm / °C . For each thermal expansion coefficient , four cases were
run : elastic and elastic - perfectly plastic ( yield strength of 100 MPa ) dielectric ,
each with elastic moduli of the dielectric of 120 GPa and 30 GPa . Again , these ...
6 , 30 and 60 ppm / °C . For each thermal expansion coefficient , four cases were
run : elastic and elastic - perfectly plastic ( yield strength of 100 MPa ) dielectric ,
each with elastic moduli of the dielectric of 120 GPa and 30 GPa . Again , these ...
Page 142
At higher temperature, the Young's modulus reduces significantly and the
elongation at break (EAB) is substantially higher (see Table 1). Young's modulus
of various electronic materials are listed in Table 3 for comparison purpose.
Figure 4 ...
At higher temperature, the Young's modulus reduces significantly and the
elongation at break (EAB) is substantially higher (see Table 1). Young's modulus
of various electronic materials are listed in Table 3 for comparison purpose.
Figure 4 ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Export Citation | BiBTeX EndNote RefMan |