Low-dielectric Constant Materials |
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Page 77
For PMDA-BPDA/PDA Young's modulus was 9.6 GPa for the alternating
copolyimide and 9. 1 GPa for the random copolyimide. As presented in Table I,
for a chosen copolyimide system the alternating copolyimide exhibited a
relatively higher ...
For PMDA-BPDA/PDA Young's modulus was 9.6 GPa for the alternating
copolyimide and 9. 1 GPa for the random copolyimide. As presented in Table I,
for a chosen copolyimide system the alternating copolyimide exhibited a
relatively higher ...
Page 131
The elastic case with 120 GPa modulus and thermal expansion coefficient of 1
ppm/°C approximates current materials. The entire structure is assumed to be
stress-free at 400 °C (a typical dielectric deposition temperature) and cooled to
room ...
The elastic case with 120 GPa modulus and thermal expansion coefficient of 1
ppm/°C approximates current materials. The entire structure is assumed to be
stress-free at 400 °C (a typical dielectric deposition temperature) and cooled to
room ...
Page 142
At higher temperature, the Young's modulus reduces significantly and the
elongation at break (EAB) is substantially higher (see Table 1). Young's modulus
of various electronic materials are listed in Table 3 for comparison purpose.
Figure 4 ...
At higher temperature, the Young's modulus reduces significantly and the
elongation at break (EAB) is substantially higher (see Table 1). Young's modulus
of various electronic materials are listed in Table 3 for comparison purpose.
Figure 4 ...
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Contents
Methods and Needs for Low K Material Research | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
23 other sections not shown
Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1995 Materials Research a-tC alternating copolyimide anisotropy annealing applications bond BPDA-PDA bulk c-BN capacitance chemical chemical vapor deposition coating copolymers copper cured decrease density device dianhydride dielectric film dielectric materials dielectric properties electromigration electronic film thickness films deposited fluorinated polyimide foamed frequency FTIR glass transition temperature h-BN helicon reactor imide in-plane increase insulating integrated circuits interlayer dielectric ISBN labile block layer low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics micron microwave modulus monomers Multilevel Interconnection organic polymers oxide Parylene patterns permittivity photoresist planarization plasma plasma treatment polish rate polyimide film polymerization pore precursor Proc refractive index Rensselaer Polytechnic Institute RTCVD-SiOF sample shown in Figure silica aerogels silicon wafers siloxane SiO2 SiO2 films slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology test structure thermal stability thin films ULSI vapor deposition VLSI
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Author | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| Export Citation | BiBTeX EndNote RefMan |