Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 59
... moisture absorption coupled with high outgassing rates of what little moisture may be present . The use of such polymers as the intermetal dielectric can reduce power consumption and cross talk , while increasing signal propagation ...
... moisture absorption coupled with high outgassing rates of what little moisture may be present . The use of such polymers as the intermetal dielectric can reduce power consumption and cross talk , while increasing signal propagation ...
Page 136
... moisture was driven out from the in - plane test structure because the polymeric film was directly exposed to the environment . The dielectric constant calculations based on the measured capacitances were equilibrium values after moisture ...
... moisture was driven out from the in - plane test structure because the polymeric film was directly exposed to the environment . The dielectric constant calculations based on the measured capacitances were equilibrium values after moisture ...
Page 219
... Moisture Uptake ≤ 0.75 wt % ( @ 50 % RH ) Adhesion Promoter Required May need moisture and Na barrier Water Diffusivity @ RT = 1.5x10-10 cm2 / sec Eact = -0.49eV ( J. Kasthurirangan , this symp ) Figure 1. Schematic of BPDA - PDA ...
... Moisture Uptake ≤ 0.75 wt % ( @ 50 % RH ) Adhesion Promoter Required May need moisture and Na barrier Water Diffusivity @ RT = 1.5x10-10 cm2 / sec Eact = -0.49eV ( J. Kasthurirangan , this symp ) Figure 1. Schematic of BPDA - PDA ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch