Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 53
... monomers in which Y is an electron donating substituent , specifically , an aryloxy group . Table 1 shows the structures , melting points and elemental analyses of the cationically polymerizable monomers prepared and used during the ...
... monomers in which Y is an electron donating substituent , specifically , an aryloxy group . Table 1 shows the structures , melting points and elemental analyses of the cationically polymerizable monomers prepared and used during the ...
Page 56
... monomers and oligomers containing aromatic imide groups bearing isopropenylphenoxy groups and to attempt their polymerization . Accordingly , monomers 6 and 7 were prepared in good yield according to the process shown in Scheme 3 ...
... monomers and oligomers containing aromatic imide groups bearing isopropenylphenoxy groups and to attempt their polymerization . Accordingly , monomers 6 and 7 were prepared in good yield according to the process shown in Scheme 3 ...
Page 57
... monomers shown in Table 1 could be photopolymerized by irradiation with UV light in presence of a diaryliodonium or triarylsulfonium salt photoinitiator.10 Typically , polymerization occurred within 20-60 seconds exposure to a 300 W ...
... monomers shown in Table 1 could be photopolymerized by irradiation with UV light in presence of a diaryliodonium or triarylsulfonium salt photoinitiator.10 Typically , polymerization occurred within 20-60 seconds exposure to a 300 W ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch