Low-dielectric Constant Materials |
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Page 53
RESULTS AND DISCUSSION Synthesis of Monomers The proposed mechanism
for the acid catalyzed condensation-ring closure reaction of isopropenyl
functional aromatic compounds is shown in Scheme l.4"8 Scheme 1 eq. 3
Protonation of ...
RESULTS AND DISCUSSION Synthesis of Monomers The proposed mechanism
for the acid catalyzed condensation-ring closure reaction of isopropenyl
functional aromatic compounds is shown in Scheme l.4"8 Scheme 1 eq. 3
Protonation of ...
Page 56
these monomers to produce polymers with indane groups in the backbones. For
example, shown in equation 5 is the photopolymerization of monomer 2. eq. 6
Aromatic polyimides are widely employed in the electronics industry as thermally
...
these monomers to produce polymers with indane groups in the backbones. For
example, shown in equation 5 is the photopolymerization of monomer 2. eq. 6
Aromatic polyimides are widely employed in the electronics industry as thermally
...
Page 57
Photopolymerization All of the monomers shown in Table 1 could be
photopolymerized by irradiation with UV light in presence of a diaryliodonium or
triarylsulfonium salt photoinitiator.10 Typically, polymerization occurred within 20-
60 ...
Photopolymerization All of the monomers shown in Table 1 could be
photopolymerized by irradiation with UV light in presence of a diaryliodonium or
triarylsulfonium salt photoinitiator.10 Typically, polymerization occurred within 20-
60 ...
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Contents
Methods and Needs for Low K Material Research | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
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Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1995 Materials Research a-tC alternating copolyimide anisotropy annealing applications bond BPDA-PDA bulk c-BN capacitance chemical chemical vapor deposition coating copolymers copper cured decrease density device dianhydride dielectric film dielectric materials dielectric properties electromigration electronic film thickness films deposited fluorinated polyimide foamed frequency FTIR glass transition temperature h-BN helicon reactor imide in-plane increase insulating integrated circuits interlayer dielectric ISBN labile block layer low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics micron microwave modulus monomers Multilevel Interconnection organic polymers oxide Parylene patterns permittivity photoresist planarization plasma plasma treatment polish rate polyimide film polymerization pore precursor Proc refractive index Rensselaer Polytechnic Institute RTCVD-SiOF sample shown in Figure silica aerogels silicon wafers siloxane SiO2 SiO2 films slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology test structure thermal stability thin films ULSI vapor deposition VLSI
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Author | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| Export Citation | BiBTeX EndNote RefMan |