Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 56
these monomers to produce polymers with indane groups in the backbones . For
example , shown in equation 5 is the photopolymerization of monomer 2 . hv Arzs
+ x Fotos eq . 6 Aromatic polyimides are widely employed in the electronics ...
these monomers to produce polymers with indane groups in the backbones . For
example , shown in equation 5 is the photopolymerization of monomer 2 . hv Arzs
+ x Fotos eq . 6 Aromatic polyimides are widely employed in the electronics ...
Page 57
Photopolymerization All of the monomers shown in Table 1 could be
photopolymerized by irradiation with UV light in presence of a diaryliodonium or
triarylsulfonium salt photoinitiator . 10 Typically , polymerization occurred within
20 - 60 ...
Photopolymerization All of the monomers shown in Table 1 could be
photopolymerized by irradiation with UV light in presence of a diaryliodonium or
triarylsulfonium salt photoinitiator . 10 Typically , polymerization occurred within
20 - 60 ...
Page 142
This is because the BPDA-PDA monomer has a flat structure which make it easy
for monomers to stack on top of each other. The PMDA-ODA monomer contains
an angled structure which increases the difficulty to form an ordered structure.
This is because the BPDA-PDA monomer has a flat structure which make it easy
for monomers to stack on top of each other. The PMDA-ODA monomer contains
an angled structure which increases the difficulty to form an ordered structure.
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers