Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 64
We have observed qualitatively that adhesion of FLARET coatings to SiO2
substrate is improved by the use of a standard adhesion promoter . A standard
tape pull test ( formally ASTM D - 3359 - 87 ) was employed . However , we have
used a ...
We have observed qualitatively that adhesion of FLARET coatings to SiO2
substrate is improved by the use of a standard adhesion promoter . A standard
tape pull test ( formally ASTM D - 3359 - 87 ) was employed . However , we have
used a ...
Page 66
Under these conditions , we observed the onset of decomposition ( as defined by
the intersection of the two linear portions of the TGA curve ) to be 540°C . It is
noteworthy that when this experiment was conducted using a thermal gradient of
...
Under these conditions , we observed the onset of decomposition ( as defined by
the intersection of the two linear portions of the TGA curve ) to be 540°C . It is
noteworthy that when this experiment was conducted using a thermal gradient of
...
Page 89
We are able to accurately measure the anisotropy ( the difference between the in
- plane and out - of - plane refractive indices ) and have observed that the
measured dielectric constant is approximately the square of the refractive index
at 633 ...
We are able to accurately measure the anisotropy ( the difference between the in
- plane and out - of - plane refractive indices ) and have observed that the
measured dielectric constant is approximately the square of the refractive index
at 633 ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers