Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 64
... obtained with y- aminopropyl ( triethoxy ) silane ( APTEOS or GAPS ) as the adhesion promoter . It is noteworthy that the adhesion promoter solution must be aged for 24 hr at 25 ° C prior to use to achieve good results . Freshly ...
... obtained with y- aminopropyl ( triethoxy ) silane ( APTEOS or GAPS ) as the adhesion promoter . It is noteworthy that the adhesion promoter solution must be aged for 24 hr at 25 ° C prior to use to achieve good results . Freshly ...
Page 83
... obtained on a Flexus F2300 stress analyzer . It measures the radius of curvature of a silicon wafer and calculates the stress from the change in the wafer curvature before and after polymer deposition . The wafers are mounted on a hot ...
... obtained on a Flexus F2300 stress analyzer . It measures the radius of curvature of a silicon wafer and calculates the stress from the change in the wafer curvature before and after polymer deposition . The wafers are mounted on a hot ...
Page 226
... obtained for the application presented in this paper . Both repaired and natural die were obtained with BPDA - PDA as ILD and passivation layers . The design for this circuit had been laid out with materials inputs being set for SiO2 ...
... obtained for the application presented in this paper . Both repaired and natural die were obtained with BPDA - PDA as ILD and passivation layers . The design for this circuit had been laid out with materials inputs being set for SiO2 ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch