Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 109
... occurs by a side reaction during the fluorination . Although both the cross- linking and cleavage occur during the fluorination , the molecular weight of the fluorinated PVDF decreases , because the thermal stability of the fluorinated ...
... occurs by a side reaction during the fluorination . Although both the cross- linking and cleavage occur during the fluorination , the molecular weight of the fluorinated PVDF decreases , because the thermal stability of the fluorinated ...
Page 231
... occurs with time , and the compression is completely removed after a maximum of 10 minutes . Since at least 60 minutes passed between polishing and measurements of thickness , the thickness change measured after polishing can be fully ...
... occurs with time , and the compression is completely removed after a maximum of 10 minutes . Since at least 60 minutes passed between polishing and measurements of thickness , the thickness change measured after polishing can be fully ...
Page 283
... occurs during argon plasma treatment , and thus the reconstructions of the loose - bond and of the broken - frame bond occur in SOG film significantly . The -OH group in SOG film appears to be related with the leakage current . The ...
... occurs during argon plasma treatment , and thus the reconstructions of the loose - bond and of the broken - frame bond occur in SOG film significantly . The -OH group in SOG film appears to be related with the leakage current . The ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch