Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 81
... oxide ) and 3,5 - diaminobenzoate terminated poly ( propylene oxide ) , were prepared according to literature procedure 14.17 The rigid dianhydride monomer , 9,9 - bis- ( trifluoromethyl ) xanthenetetracarboxylic dianhydride ( 6FXDA ) ...
... oxide ) and 3,5 - diaminobenzoate terminated poly ( propylene oxide ) , were prepared according to literature procedure 14.17 The rigid dianhydride monomer , 9,9 - bis- ( trifluoromethyl ) xanthenetetracarboxylic dianhydride ( 6FXDA ) ...
Page 87
... oxide ) F3C CF3 70 C 16 h Pyridine / Ac - O - Ac X F3C CF3 @iofrot n Scheme 3. Synthesis of Polyimides : Poly ( amic ... oxide ) 15 9.9 9 11 3 PMDA / 3FDA ( imide ) Poly ( propylene oxide ) 25 23 22 4 PMDA / 3FDA ( imide ) Poly ( a ...
... oxide ) F3C CF3 70 C 16 h Pyridine / Ac - O - Ac X F3C CF3 @iofrot n Scheme 3. Synthesis of Polyimides : Poly ( amic ... oxide ) 15 9.9 9 11 3 PMDA / 3FDA ( imide ) Poly ( propylene oxide ) 25 23 22 4 PMDA / 3FDA ( imide ) Poly ( a ...
Page 125
... oxide and silicon nitride , which are current ILD materials , organic polymers , and SiO2 Aerogel samples with two densities , are measured and compared . Figures 6 and 7 are the plots of load vs. penetration for thermal oxide and ...
... oxide and silicon nitride , which are current ILD materials , organic polymers , and SiO2 Aerogel samples with two densities , are measured and compared . Figures 6 and 7 are the plots of load vs. penetration for thermal oxide and ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch