Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 81
1,1 - bis ( 4 - aminophenyl ) -1 - phenyl - 2,2,2 - trifluromethane ( 3FDA ) , aminophenyl carbonate terminated poly ( propylene oxide ) and 3,5 - diaminobenzoate terminated poly ( propylene oxide ) , were prepared according to ...
1,1 - bis ( 4 - aminophenyl ) -1 - phenyl - 2,2,2 - trifluromethane ( 3FDA ) , aminophenyl carbonate terminated poly ( propylene oxide ) and 3,5 - diaminobenzoate terminated poly ( propylene oxide ) , were prepared according to ...
Page 87
CF3 CF3 HN-NH2 topotoi -NH2 6FDAm 6FXDA Labile Block Poly ( propylene oxide ) 25 C NMP or porg 24 h 70 C Pyridine / Ac - O - AC 16 h CF3 F3C For తరలిరంగు రంగులు pleco , n n х Scheme 3. Synthesis of Polyimides : Poly ( amic ...
CF3 CF3 HN-NH2 topotoi -NH2 6FDAm 6FXDA Labile Block Poly ( propylene oxide ) 25 C NMP or porg 24 h 70 C Pyridine / Ac - O - AC 16 h CF3 F3C For తరలిరంగు రంగులు pleco , n n х Scheme 3. Synthesis of Polyimides : Poly ( amic ...
Page 125
Three groups of materials including thermal oxide and silicon nitride , which are current ILD materials , organic polymers , and SiO2 Aerogel samples with two densities , are measured and compared . Figures 6 and 7 are the plots of load ...
Three groups of materials including thermal oxide and silicon nitride , which are current ILD materials , organic polymers , and SiO2 Aerogel samples with two densities , are measured and compared . Figures 6 and 7 are the plots of load ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |