Low-dielectric Constant Materials |
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Page 81
All of the diamines and dianhydrides were sublimed prior to use. l,l-bis(4-
aminophenyl)-l -phenyl- 2,2,2-trifluromethane (3FDA), aminophenyl carbonate
terminated poly (propylene oxide) and 3,5-diaminobenzoate terminated poly(
propylene ...
All of the diamines and dianhydrides were sublimed prior to use. l,l-bis(4-
aminophenyl)-l -phenyl- 2,2,2-trifluromethane (3FDA), aminophenyl carbonate
terminated poly (propylene oxide) and 3,5-diaminobenzoate terminated poly(
propylene ...
Page 87
CF3 6FDAm 6FXDA 25 C 24 h NMP or/ 70 C 16 h " Pyridine / Ac-O-Ac Labile
Block Polypropylene oxide) O F3C CF3 0 Scheme 3. Synthesis of Polyimides:
Poly(amic acid) Route we concentrated our efforts on copolymers containing 15 -
30% ...
CF3 6FDAm 6FXDA 25 C 24 h NMP or/ 70 C 16 h " Pyridine / Ac-O-Ac Labile
Block Polypropylene oxide) O F3C CF3 0 Scheme 3. Synthesis of Polyimides:
Poly(amic acid) Route we concentrated our efforts on copolymers containing 15 -
30% ...
Page 125
Three groups of materials including thermal oxide and silicon nitride, which are
current ILD materials, organic polymers, and SiO2 Aerogel samples with two
densities, are measured and compared. Figures 6 and 7 are the plots of load vs.
Three groups of materials including thermal oxide and silicon nitride, which are
current ILD materials, organic polymers, and SiO2 Aerogel samples with two
densities, are measured and compared. Figures 6 and 7 are the plots of load vs.
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Contents
Methods and Needs for Low K Material Research | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
23 other sections not shown
Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1995 Materials Research a-tC alternating copolyimide anisotropy annealing applications bond BPDA-PDA bulk c-BN capacitance chemical chemical vapor deposition coating copolymers copper cured decrease density device dianhydride dielectric film dielectric materials dielectric properties electromigration electronic film thickness films deposited fluorinated polyimide foamed frequency FTIR glass transition temperature h-BN helicon reactor imide in-plane increase insulating integrated circuits interlayer dielectric ISBN labile block layer low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics micron microwave modulus monomers Multilevel Interconnection organic polymers oxide Parylene patterns permittivity photoresist planarization plasma plasma treatment polish rate polyimide film polymerization pore precursor Proc refractive index Rensselaer Polytechnic Institute RTCVD-SiOF sample shown in Figure silica aerogels silicon wafers siloxane SiO2 SiO2 films slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology test structure thermal stability thin films ULSI vapor deposition VLSI
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Author | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| Export Citation | BiBTeX EndNote RefMan |