Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 10
... oxygen plasma photoresist stripping process , however , wet photoresist stripper , such as the new EKC 265 stripper , was found to be satisfactory . A simple metallization test structure is being fabricated to demonstrate the ...
... oxygen plasma photoresist stripping process , however , wet photoresist stripper , such as the new EKC 265 stripper , was found to be satisfactory . A simple metallization test structure is being fabricated to demonstrate the ...
Page 61
... oxygen polymers called silsesquioxanes , which can be thought of as high organic content spin - on glasses [ 14 ] . Thus , organic polymers and / or one or more of these newer materials may provide intermediate dielectric solutions for ...
... oxygen polymers called silsesquioxanes , which can be thought of as high organic content spin - on glasses [ 14 ] . Thus , organic polymers and / or one or more of these newer materials may provide intermediate dielectric solutions for ...
Page 108
... oxygen in the chamber [ 4 ] . Table 2. Thermal stability of the fluorinated polymers Polymers T1 / TO ( % ) non - fluorinated fluorinated PVdF 100 78 Poly - 1,3 , -butadiene 23 45 a - Carbon 100 46 Molecular structures It is very ...
... oxygen in the chamber [ 4 ] . Table 2. Thermal stability of the fluorinated polymers Polymers T1 / TO ( % ) non - fluorinated fluorinated PVdF 100 78 Poly - 1,3 , -butadiene 23 45 a - Carbon 100 46 Molecular structures It is very ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch