Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 222
... passivation . Bond Pad opening is not indicated in final schematic detail . The via and passivation etches are composed of several steps , and their order is : ( 1 ) PEN hardmask etch in CHF3 / O2 , ( 2 ) polyimide etch in O2 , ( 3 ) ...
... passivation . Bond Pad opening is not indicated in final schematic detail . The via and passivation etches are composed of several steps , and their order is : ( 1 ) PEN hardmask etch in CHF3 / O2 , ( 2 ) polyimide etch in O2 , ( 3 ) ...
Page 225
... passivation depositions to avoid this problem . Passivation depositions of polyimide and PEN require placement of a wafer on what is essentially a hot plate at temperatures of 130 ° C and ~ 350 ° C , respectively . A prebake sequence ...
... passivation depositions to avoid this problem . Passivation depositions of polyimide and PEN require placement of a wafer on what is essentially a hot plate at temperatures of 130 ° C and ~ 350 ° C , respectively . A prebake sequence ...
Page 226
... passivation layers . The design for this circuit had been laid out with materials inputs being set for SiO2 and Al ( Cu ) ; no redesign was done to include the modifications that polyimide might allow , e.g. , thinner ILD or passivation ...
... passivation layers . The design for this circuit had been laid out with materials inputs being set for SiO2 and Al ( Cu ) ; no redesign was done to include the modifications that polyimide might allow , e.g. , thinner ILD or passivation ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch