Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 240
... patterns . Next , the deposition conditions were changed to improve gap fill property . Fluorotrinormalpropoxysilane [ FSi ( n - OC3H7 ) 3 , FTNPS ] was also used as gas sources . The flow rates of N2 gas through FTAS group and water ...
... patterns . Next , the deposition conditions were changed to improve gap fill property . Fluorotrinormalpropoxysilane [ FSi ( n - OC3H7 ) 3 , FTNPS ] was also used as gas sources . The flow rates of N2 gas through FTAS group and water ...
Page 242
... patterns , respectively , as compared to ( d ) the TEOS / O , SiO2 film . The RTCVD - SiOF film is conformably deposited on the substrate surface with Al wiring patterns , as shown in Fig . 1 ( a ) . The LPD - SiO2 film is selectively ...
... patterns , respectively , as compared to ( d ) the TEOS / O , SiO2 film . The RTCVD - SiOF film is conformably deposited on the substrate surface with Al wiring patterns , as shown in Fig . 1 ( a ) . The LPD - SiO2 film is selectively ...
Page 244
... Patterns ( b ) On Al Patterns LPD - SiO2 Poly -Si LPD - SiO2 PECVD - SiO2 XX AI 1 μm 1 μm Fig . 3 SEM cross - sectional views of the LPD - SIO , films deposited on the whole surfaces of substrates with the poly - silicon and Al wiring ...
... Patterns ( b ) On Al Patterns LPD - SiO2 Poly -Si LPD - SiO2 PECVD - SiO2 XX AI 1 μm 1 μm Fig . 3 SEM cross - sectional views of the LPD - SIO , films deposited on the whole surfaces of substrates with the poly - silicon and Al wiring ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch