Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 35
... peak intensity of CO2 band ( 2354 cm1 and 2320 cm1 ) upon heating can be explained by that carbons from the ... peak positions of the fluorinated polyimide film . However , the intensities of the peaks are increased upon annealing at 350 ...
... peak intensity of CO2 band ( 2354 cm1 and 2320 cm1 ) upon heating can be explained by that carbons from the ... peak positions of the fluorinated polyimide film . However , the intensities of the peaks are increased upon annealing at 350 ...
Page 108
... peak at 287 eV is assigned to the C - CFx which is associated with carbon adjacent to fluorocarbon groups such as -CF2- or -CF3 . The peaks at 290 , 292 and 294eV are assigned to the > CF - , - CF2- and -CF3 carbon , respectively . Non ...
... peak at 287 eV is assigned to the C - CFx which is associated with carbon adjacent to fluorocarbon groups such as -CF2- or -CF3 . The peaks at 290 , 292 and 294eV are assigned to the > CF - , - CF2- and -CF3 carbon , respectively . Non ...
Page 281
... peak shifts to higher wave number and the intensity of Si - O - Si modes decreases . The peak shift of Si- O - Si from 1049 cm to 1062 cm1 by plasma treatment seems to be resulted from the densification of SOG film . Furthermore , the ...
... peak shifts to higher wave number and the intensity of Si - O - Si modes decreases . The peak shift of Si- O - Si from 1049 cm to 1062 cm1 by plasma treatment seems to be resulted from the densification of SOG film . Furthermore , the ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch