Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 69
... Performance Circuits , Rensselaer Polytechnic Institute , Troy , NY , Aug. 9-10 , 1994 ; ( b ) T.S. Kuan , " Low Dielectric Constant Interlevel Dielectrics for High Performance Interconnects " , presented at the Dielectrics and CVD ...
... Performance Circuits , Rensselaer Polytechnic Institute , Troy , NY , Aug. 9-10 , 1994 ; ( b ) T.S. Kuan , " Low Dielectric Constant Interlevel Dielectrics for High Performance Interconnects " , presented at the Dielectrics and CVD ...
Page 123
... performance , such as power dissipation , crosstalk and RC delay , when used as inter - layer dielectrics ( ILDs ) . Silicon dioxide , a material commonly used as an ILD has a dielectric constant of 4.0 . Organic polymers that have ...
... performance , such as power dissipation , crosstalk and RC delay , when used as inter - layer dielectrics ( ILDs ) . Silicon dioxide , a material commonly used as an ILD has a dielectric constant of 4.0 . Organic polymers that have ...
Page 197
... performance improvement through reduction in capacitance . An embedded polymer integration scheme improves the interconnect performance through line - to - line capacitance reduction by using polymer only between tightly spaced lines ...
... performance improvement through reduction in capacitance . An embedded polymer integration scheme improves the interconnect performance through line - to - line capacitance reduction by using polymer only between tightly spaced lines ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch