Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 61
... performed using a Flexus ( Tencor ) stress gauge , Model 2410 with Flexus Stress Measurement Software , Version 3.0 . Adhesion tests were performed in accordance with ASTM D3359-87 . Adhesion of thin films to SiO2 substrate was ...
... performed using a Flexus ( Tencor ) stress gauge , Model 2410 with Flexus Stress Measurement Software , Version 3.0 . Adhesion tests were performed in accordance with ASTM D3359-87 . Adhesion of thin films to SiO2 substrate was ...
Page 274
... performed at room temperature with no subsequent annealing . The formation of c - BN films is difficult . Although ... performed on the metal - insulator - metal ( MIM ) and metal - insulator - semiconductor ( MIS ) diodes at frequencies ...
... performed at room temperature with no subsequent annealing . The formation of c - BN films is difficult . Although ... performed on the metal - insulator - metal ( MIM ) and metal - insulator - semiconductor ( MIS ) diodes at frequencies ...
Page 275
... performed on a - tC films deposited on thick SiO2 layers indicated resistivities > 106 cm even for samples exhibiting resistivities normal to the film plane < 103 Ncm , thus suggesting the existence of " shorts " – possibly graphitic ...
... performed on a - tC films deposited on thick SiO2 layers indicated resistivities > 106 cm even for samples exhibiting resistivities normal to the film plane < 103 Ncm , thus suggesting the existence of " shorts " – possibly graphitic ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch