Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 162
... permittivity . Presently for low - dielectric constant materials , measurement of the real part of the permittivity has been emphasized . In the future it is expected that loss will become of more interest . In high - dielectric ...
... permittivity . Presently for low - dielectric constant materials , measurement of the real part of the permittivity has been emphasized . In the future it is expected that loss will become of more interest . In high - dielectric ...
Page 255
... permittivity , many of major SOG suppliers are developing new types of methyl siloxane SOGS . The most interesting property of these SOGS is their permittivity , which we measured by making stack structures of Al - 0.5 % Cu / TEOS CVD ...
... permittivity , many of major SOG suppliers are developing new types of methyl siloxane SOGS . The most interesting property of these SOGS is their permittivity , which we measured by making stack structures of Al - 0.5 % Cu / TEOS CVD ...
Page 258
... permittivity 3.0 ± 0.5 3.0 ± 0.1 2.9 ± 0.1 3.6 ± 0.1 As already mentioned , thin film SOG ( a ) was striated . It made the precise determination of the electrode area difficult , leading to the large error in the permittivity . Probably ...
... permittivity 3.0 ± 0.5 3.0 ± 0.1 2.9 ± 0.1 3.6 ± 0.1 As already mentioned , thin film SOG ( a ) was striated . It made the precise determination of the electrode area difficult , leading to the large error in the permittivity . Probably ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch