Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 162
Permittivity component is sampled by appropriate field component . In the future there will be increasing demand to measure thinner low - loss materials of low to high dielectric constant to higher accuracy . This presents a metrology ...
Permittivity component is sampled by appropriate field component . In the future there will be increasing demand to measure thinner low - loss materials of low to high dielectric constant to higher accuracy . This presents a metrology ...
Page 255
In accordance with the requirement of low permittivity , many of major SOG suppliers are developing ne types of methyl siloxane SOGs . The most interesting property of these SOGs is their permittivity , which we measured by making stack ...
In accordance with the requirement of low permittivity , many of major SOG suppliers are developing ne types of methyl siloxane SOGs . The most interesting property of these SOGs is their permittivity , which we measured by making stack ...
Page 258
A parallel plate capacitance formula was used for the permittivity extraction . ... Table IV : Permittivities of the Cured SOGs type of SOG ( a ) ( b ) ( c ) ( d ) permittivity 3.0 +0.5 3.0 +0.1 2.9 +0.1 3.6 +0.1 As already mentioned ...
A parallel plate capacitance formula was used for the permittivity extraction . ... Table IV : Permittivities of the Cured SOGs type of SOG ( a ) ( b ) ( c ) ( d ) permittivity 3.0 +0.5 3.0 +0.1 2.9 +0.1 3.6 +0.1 As already mentioned ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |