Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
From inside the book
Results 1-3 of 4
Page 117
... photons on the film to initiate physical and chemical processes allowed a lower curing temperature to achieve the same level of immidization . Furthermore , these samples also gave the lowest leakage current and film stress . Therefore ...
... photons on the film to initiate physical and chemical processes allowed a lower curing temperature to achieve the same level of immidization . Furthermore , these samples also gave the lowest leakage current and film stress . Therefore ...
Page 121
... photons . Consequently , the amount of photo excitation of the film material taking place due to the presence of these photons depends upon their number available on the polyimide film . In ... PHOTON FLUX ( PHOTONS / CM ^ 2.SEC ) 1019 121.
... photons . Consequently , the amount of photo excitation of the film material taking place due to the presence of these photons depends upon their number available on the polyimide film . In ... PHOTON FLUX ( PHOTONS / CM ^ 2.SEC ) 1019 121.
Page 122
... PHOTON FLUX ( PHOTONS / CM ^ 2.SEC ) 1019 1018 1017 . 1016 . 15 . 106 9999999999 10 103 102 101 100 BOTTOM + VUV TOP TOP + BOTTOM BOTTOM FIGURE 6. PHOTON FLUX IN DIFFERENT CURING CONFIGURATIONS AT 400 C 2 3 WAVELENGTH ( MICRONS ) This ...
... PHOTON FLUX ( PHOTONS / CM ^ 2.SEC ) 1019 1018 1017 . 1016 . 15 . 106 9999999999 10 103 102 101 100 BOTTOM + VUV TOP TOP + BOTTOM BOTTOM FIGURE 6. PHOTON FLUX IN DIFFERENT CURING CONFIGURATIONS AT 400 C 2 3 WAVELENGTH ( MICRONS ) This ...
Contents
Methods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
30 other sections not shown
Other editions - View all
Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured decrease density device dielectric film dielectric properties electrode electromigration FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology TEOS/O test structure thermal stability thin films ULSI vapor deposition wet etch