Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 7
... Photoresist Strip TiN Liner Deposition TIN ΑΙ = TIN CVD W Deposition / Etch - back Ti / AI / TIN Conductor Deposition W Photolithography - Conductor Pattern SiO2 SiO2 Plasma Etch - Conductor Pattern Photoresist Strip Schematic diagram ...
... Photoresist Strip TiN Liner Deposition TIN ΑΙ = TIN CVD W Deposition / Etch - back Ti / AI / TIN Conductor Deposition W Photolithography - Conductor Pattern SiO2 SiO2 Plasma Etch - Conductor Pattern Photoresist Strip Schematic diagram ...
Page 10
... photoresist stripping process , however , wet photoresist stripper , such as the new EKC 265 stripper , was found to be satisfactory . A simple metallization test structure is being fabricated to demonstrate the compatibility of organic ...
... photoresist stripping process , however , wet photoresist stripper , such as the new EKC 265 stripper , was found to be satisfactory . A simple metallization test structure is being fabricated to demonstrate the compatibility of organic ...
Page 109
... photo resist was spin - coated onto silicon wafers and then exposed and developed . The photo resist developed was fluorinated by the fluorine plasma . This application elminates the patterning process , because the fluorinated photo ...
... photo resist was spin - coated onto silicon wafers and then exposed and developed . The photo resist developed was fluorinated by the fluorine plasma . This application elminates the patterning process , because the fluorinated photo ...
Contents
Methods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured decrease density device dielectric film dielectric properties electrode electromigration FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology TEOS/O test structure thermal stability thin films ULSI vapor deposition wet etch