Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 115
... planarization ( DOP ) for the spin cast TAE films is shown in figure 5. Planarization is an important advantage for polymer inter - level dielectrics since they may reduce the number of processing steps required to achieve a flat ...
... planarization ( DOP ) for the spin cast TAE films is shown in figure 5. Planarization is an important advantage for polymer inter - level dielectrics since they may reduce the number of processing steps required to achieve a flat ...
Page 218
... planarization module to reduce topography to within depth of focus limits for Via and M2 lithography . Our requirements are less stringent than those reported for polyimide substitution for a W via fill , and a planarization module for ...
... planarization module to reduce topography to within depth of focus limits for Via and M2 lithography . Our requirements are less stringent than those reported for polyimide substitution for a W via fill , and a planarization module for ...
Page 239
... planarization , the LPD technique can achieve both global and local planarization because this technique has high capability for selective SiO2 film deposition . The RTCVD , FAST and LPD techniques have shown the possibility to reduce ...
... planarization , the LPD technique can achieve both global and local planarization because this technique has high capability for selective SiO2 film deposition . The RTCVD , FAST and LPD techniques have shown the possibility to reduce ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch