Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 115
The degree of planarization ( DOP ) for the spin cast TAE films is shown in figure 5. Planarization is an important advantage for polymer inter - level dielectrics since they may reduce the number of processing steps required to achieve ...
The degree of planarization ( DOP ) for the spin cast TAE films is shown in figure 5. Planarization is an important advantage for polymer inter - level dielectrics since they may reduce the number of processing steps required to achieve ...
Page 218
Process Requirements The interconnect technology required for our application uses either a tungsten via - fill capability or a planarization module to reduce topography to within depth of focus limits for Via and M2 lithography .
Process Requirements The interconnect technology required for our application uses either a tungsten via - fill capability or a planarization module to reduce topography to within depth of focus limits for Via and M2 lithography .
Page 239
The interlayer dielectric film properties and their formation techniques have to meet the following requirements : ( 1 ) a low dielectric constant , ( 2 ) a high planarization capability , ( 3 ) a high capability for narrow gap filling ...
The interlayer dielectric film properties and their formation techniques have to meet the following requirements : ( 1 ) a low dielectric constant , ( 2 ) a high planarization capability , ( 3 ) a high capability for narrow gap filling ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |