Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 178
We assume that all advanced interconnect alternatives will include globally
planarized oxides covering the silicon wafer following the front-end IC processing
. This global planarization is only possible at this time with chemical-mechanical
...
We assume that all advanced interconnect alternatives will include globally
planarized oxides covering the silicon wafer following the front-end IC processing
. This global planarization is only possible at this time with chemical-mechanical
...
Page 218
Our requirements are less stringent than those reported for polyimide substitution
for a W via fill6, and a planarization module for polyimide to enable a four level
metal technology7. Our process requirements are summarized in Table I. Table I:
...
Our requirements are less stringent than those reported for polyimide substitution
for a W via fill6, and a planarization module for polyimide to enable a four level
metal technology7. Our process requirements are summarized in Table I. Table I:
...
Page 229
In such applications they will be subjected to planarization processes using
chemical - mechanical polishing ( CMP ) , either directly during dielectric
planarization or indirectly in the final stages of metal patterning using the
Damascene ...
In such applications they will be subjected to planarization processes using
chemical - mechanical polishing ( CMP ) , either directly during dielectric
planarization or indirectly in the final stages of metal patterning using the
Damascene ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers