Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Results 1-3 of 39
Page 198
1(a) shows delamination of plasma SiOj cap layer from an organic spin-on-glass
(polysilsesquioxane) surface during CVD tungsten deposition. The high stress in
the tungsten film peels the plasma SiO2 layer from the weak plasma SiO2/SOG ...
1(a) shows delamination of plasma SiOj cap layer from an organic spin-on-glass
(polysilsesquioxane) surface during CVD tungsten deposition. The high stress in
the tungsten film peels the plasma SiO2 layer from the weak plasma SiO2/SOG ...
Page 282
Figure 4 shows the wet etch rate and refractive index plotted against plasma
treatment time at 400 °C . With increasing treatment time , the etch rate decreases
and then saturates . The refractive index increases with treatment time .
Figure 4 shows the wet etch rate and refractive index plotted against plasma
treatment time at 400 °C . With increasing treatment time , the etch rate decreases
and then saturates . The refractive index increases with treatment time .
Page 283
The breakdown strength of SOG film increases and leakage current decreases
with Ar plasma treatment time . As discussed previously in the FT - IR data , the
reduction of silanols ( Si - OH ) and of methyl ( - CH3 ) group in the bulk of SOG
film ...
The breakdown strength of SOG film increases and leakage current decreases
with Ar plasma treatment time . As discussed previously in the FT - IR data , the
reduction of silanols ( Si - OH ) and of methyl ( - CH3 ) group in the bulk of SOG
film ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Export Citation | BiBTeX EndNote RefMan |