Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 280
The thickness of SOG films after soft bakes was about 2000 Å . The plasma CVD chamber was used for the argon plasma treatment . The upper electrode was connected to 13.56 MHz radio frequency ( RF ) generator . RF power and gas pressure ...
The thickness of SOG films after soft bakes was about 2000 Å . The plasma CVD chamber was used for the argon plasma treatment . The upper electrode was connected to 13.56 MHz radio frequency ( RF ) generator . RF power and gas pressure ...
Page 281
The absorbance peak of the methyl ( -CH3 ) group in argon plasma treated film is much lower than that of the film cured in a furnace . The intensity of methyl ( -CH3 ) group decreases with increasing treatment time from 10 min to 150 ...
The absorbance peak of the methyl ( -CH3 ) group in argon plasma treated film is much lower than that of the film cured in a furnace . The intensity of methyl ( -CH3 ) group decreases with increasing treatment time from 10 min to 150 ...
Page 283
The breakdown strength of SOG film increases and leakage current decreases with Ar plasma treatment time . As discussed previously the FT - IR data , the reduction of silanols ( Si - OH ) and of methyl ( -CH3 ) group in the bulk of SOG ...
The breakdown strength of SOG film increases and leakage current decreases with Ar plasma treatment time . As discussed previously the FT - IR data , the reduction of silanols ( Si - OH ) and of methyl ( -CH3 ) group in the bulk of SOG ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |