Low-dielectric Constant Materials |
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Page 183
The mechanically dislodged material with a high surface-to-volume ratio must
have a high dissolution rate into the slurry ... The resultant high ratio of polish rate
to etch rate indicates that the slurry is capable of good planarization (which also ...
The mechanically dislodged material with a high surface-to-volume ratio must
have a high dissolution rate into the slurry ... The resultant high ratio of polish rate
to etch rate indicates that the slurry is capable of good planarization (which also ...
Page 231
These measurements were done using a Cannon- Ubbelohde Semi-Micro
dilution capillary viscometer. RESULTS AND DISCUSSION Figures 2, 3 and 4
show the polish rate in nm/min for PA, BCB and FP, respectively, as a function of
the pH ...
These measurements were done using a Cannon- Ubbelohde Semi-Micro
dilution capillary viscometer. RESULTS AND DISCUSSION Figures 2, 3 and 4
show the polish rate in nm/min for PA, BCB and FP, respectively, as a function of
the pH ...
Page 233
Softer BCB films are abraded easily leading to a higher rate of about 1.05 - 1.1
nm/min as compared to annealed films with polish rates of about 0.7 - 0.75 nm/
min at the same pH values (pH < 2). Effect of the chemistry of the slurry, which
affects ...
Softer BCB films are abraded easily leading to a higher rate of about 1.05 - 1.1
nm/min as compared to annealed films with polish rates of about 0.7 - 0.75 nm/
min at the same pH values (pH < 2). Effect of the chemistry of the slurry, which
affects ...
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Contents
Methods and Needs for Low K Material Research | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
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Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1995 Materials Research a-tC alternating copolyimide anisotropy annealing applications bond BPDA-PDA bulk c-BN capacitance chemical chemical vapor deposition coating copolymers copper cured decrease density device dianhydride dielectric film dielectric materials dielectric properties electromigration electronic film thickness films deposited fluorinated polyimide foamed frequency FTIR glass transition temperature h-BN helicon reactor imide in-plane increase insulating integrated circuits interlayer dielectric ISBN labile block layer low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics micron microwave modulus monomers Multilevel Interconnection organic polymers oxide Parylene patterns permittivity photoresist planarization plasma plasma treatment polish rate polyimide film polymerization pore precursor Proc refractive index Rensselaer Polytechnic Institute RTCVD-SiOF sample shown in Figure silica aerogels silicon wafers siloxane SiO2 SiO2 films slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology test structure thermal stability thin films ULSI vapor deposition VLSI