Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
From inside the book
Results 1-3 of 4
Page 183
... rate of copper even though the solubility of copper is high in the slurry . The Cu2O surface layer results in a low removal rate in the low features as the direct dissolution rate of copper is small . The resultant high ratio of polish rate ...
... rate of copper even though the solubility of copper is high in the slurry . The Cu2O surface layer results in a low removal rate in the low features as the direct dissolution rate of copper is small . The resultant high ratio of polish rate ...
Page 231
... polish rate in μm / min for PA , BCB and FP , respectively , as a function of the pH of the slurry . Note acidic slurries were controlled by the use of HNO3 acid while basic slurries ... polish rates 1.8 1.6 1.4 E 1.2 Rate [ um / min 231.
... polish rate in μm / min for PA , BCB and FP , respectively , as a function of the pH of the slurry . Note acidic slurries were controlled by the use of HNO3 acid while basic slurries ... polish rates 1.8 1.6 1.4 E 1.2 Rate [ um / min 231.
Page 233
... polish rates of about 0.7 0.75 μm / min at the same pH values ( pH < 2 ) . Effect of the chemistry of the slurry ... rate at pH < 2 . The increase in polish rate with increasing pH could be attributed to a changing of charge ( total ...
... polish rates of about 0.7 0.75 μm / min at the same pH values ( pH < 2 ) . Effect of the chemistry of the slurry ... rate at pH < 2 . The increase in polish rate with increasing pH could be attributed to a changing of charge ( total ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
21 other sections not shown
Other editions - View all
Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch