Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 230
... polishing by profilometry . The slurry used for polishing consisted of alumina abrasive and either HNO3 or NH4OH to adjust the pH . Compression of the polymers did not affect the thickness measurements . Submitting the polymers to a ...
... polishing by profilometry . The slurry used for polishing consisted of alumina abrasive and either HNO3 or NH4OH to adjust the pH . Compression of the polymers did not affect the thickness measurements . Submitting the polymers to a ...
Page 231
... polished for 20 seconds . Comparison of the signals of as deposited samples , samples polished for 2 seconds and ones polished for 20 seconds may yield information about water absorption as well as polymer degradation during polishing ...
... polished for 20 seconds . Comparison of the signals of as deposited samples , samples polished for 2 seconds and ones polished for 20 seconds may yield information about water absorption as well as polymer degradation during polishing ...
Page 233
... polished surface of the spun on polymers ( BCB and FP ) . These defects are shown in figure 5 . Fig . 5a Fig . 5b Fig . 5 : Pinhole defect ( a ) and water absorption defect ( b ) in BCB film , after polishing . The marker shows 0.5 mm ...
... polished surface of the spun on polymers ( BCB and FP ) . These defects are shown in figure 5 . Fig . 5a Fig . 5b Fig . 5 : Pinhole defect ( a ) and water absorption defect ( b ) in BCB film , after polishing . The marker shows 0.5 mm ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch