Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 185
By comparing the polishing and etching rates in NH , OH - based and NH NO3 -
based slurries , we concluded that the abraded copper is first dissolved as Cu2 +
and then complexed to Cu ( NH3 ) 2 + However , in the NH , OH slurry with a pH ...
By comparing the polishing and etching rates in NH , OH - based and NH NO3 -
based slurries , we concluded that the abraded copper is first dissolved as Cu2 +
and then complexed to Cu ( NH3 ) 2 + However , in the NH , OH slurry with a pH ...
Page 189
Results with small samples were then transferred for further studies with 125 mm
diameter wafers with fine test patterns using a Strasbaugh 6CU polisher .
Polishing variables included the following : - - - alumina abrasive 5 wt % of
nominal ...
Results with small samples were then transferred for further studies with 125 mm
diameter wafers with fine test patterns using a Strasbaugh 6CU polisher .
Polishing variables included the following : - - - alumina abrasive 5 wt % of
nominal ...
Page 190
The polishing rate could be increased by a further factor of 2 by increasing the
nitric acid concentration to 10 % ... The harder BCB results in a somewhat more
robust Cu polishing process , although the difference between BCB and parylene
is ...
The polishing rate could be increased by a further factor of 2 by increasing the
nitric acid concentration to 10 % ... The harder BCB results in a somewhat more
robust Cu polishing process , although the difference between BCB and parylene
is ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers