Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 32
Experimental Procedure : Sample preparation and thermal treatments Prior to the deposition of the fluorinated polyimide film , the silicon or oxidized silicon wafers were cleaned in Karos Acid ( 1 H2 SO4 : 1H , O2 ) for 3 minutes to ...
Experimental Procedure : Sample preparation and thermal treatments Prior to the deposition of the fluorinated polyimide film , the silicon or oxidized silicon wafers were cleaned in Karos Acid ( 1 H2 SO4 : 1H , O2 ) for 3 minutes to ...
Page 141
THERMAL AND MECHANICAL PROPERTIES OF POLYIMIDE FILMS S. T. CHEN IBM Semiconductor Research and Development Center P.O. Box 218 , Yorktown Heights , NY 10598 INTRODUCTION In recent years , polyimide film has become a commonly used ...
THERMAL AND MECHANICAL PROPERTIES OF POLYIMIDE FILMS S. T. CHEN IBM Semiconductor Research and Development Center P.O. Box 218 , Yorktown Heights , NY 10598 INTRODUCTION In recent years , polyimide film has become a commonly used ...
Page 142
The PMDA - ODA monomer contains an angled structure which increases the difficulty to form an ordered structure . It has been observed that the polyimide film made of odd shaped monomer could have isotropic electronic and thermal ...
The PMDA - ODA monomer contains an angled structure which increases the difficulty to form an ordered structure . It has been observed that the polyimide film made of odd shaped monomer could have isotropic electronic and thermal ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |