Low-dielectric Constant Materials |
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Page 32
Experimental Procedure: Sample preparation and thermal treatments Prior to the
deposition of the fluorinated polyimide film, the silicon or oxidized silicon wafers
were cleaned in Karos Acid ( 1 H2 S04 : 1H2 O2 ) for 3 minutes to remove any ...
Experimental Procedure: Sample preparation and thermal treatments Prior to the
deposition of the fluorinated polyimide film, the silicon or oxidized silicon wafers
were cleaned in Karos Acid ( 1 H2 S04 : 1H2 O2 ) for 3 minutes to remove any ...
Page 141
THERMAL AND MECHANICAL PROPERTIES OF POLYIMIDE FILMS S. T. CHEN
IBM Semiconductor Research and Development Center P.O. Box 218, Yorktown
Heights, NY 10598 INTRODUCTION In recent years, polyimide film has ...
THERMAL AND MECHANICAL PROPERTIES OF POLYIMIDE FILMS S. T. CHEN
IBM Semiconductor Research and Development Center P.O. Box 218, Yorktown
Heights, NY 10598 INTRODUCTION In recent years, polyimide film has ...
Page 142
The coherence length, i.e., the average "crystallite" size along the chain axis, was
determined by them to be about 155 A. Thin PMDA-ODA film has in-plane CTE
about 35 ppm/°C. Figure 2 shows the «i of a 24.2 ji/n thick PMDA-ODA polyimide
...
The coherence length, i.e., the average "crystallite" size along the chain axis, was
determined by them to be about 155 A. Thin PMDA-ODA film has in-plane CTE
about 35 ppm/°C. Figure 2 shows the «i of a 24.2 ji/n thick PMDA-ODA polyimide
...
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Contents
Methods and Needs for Low K Material Research | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
23 other sections not shown
Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1995 Materials Research a-tC alternating copolyimide anisotropy annealing applications bond BPDA-PDA bulk c-BN capacitance chemical chemical vapor deposition coating copolymers copper cured decrease density device dianhydride dielectric film dielectric materials dielectric properties electromigration electronic film thickness films deposited fluorinated polyimide foamed frequency FTIR glass transition temperature h-BN helicon reactor imide in-plane increase insulating integrated circuits interlayer dielectric ISBN labile block layer low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics micron microwave modulus monomers Multilevel Interconnection organic polymers oxide Parylene patterns permittivity photoresist planarization plasma plasma treatment polish rate polyimide film polymerization pore precursor Proc refractive index Rensselaer Polytechnic Institute RTCVD-SiOF sample shown in Figure silica aerogels silicon wafers siloxane SiO2 SiO2 films slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology test structure thermal stability thin films ULSI vapor deposition VLSI
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Author | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| Export Citation | BiBTeX EndNote RefMan |