Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 32
... polyimide film is deposited on the substrates by spinning a precursor mixed with NMP ( N - Methyl - 2 - Pyrrolidone ) solution on both Si and SiO2 at a constant speed between 2000 and 6000 rpm until the film is dry . The particulates in ...
... polyimide film is deposited on the substrates by spinning a precursor mixed with NMP ( N - Methyl - 2 - Pyrrolidone ) solution on both Si and SiO2 at a constant speed between 2000 and 6000 rpm until the film is dry . The particulates in ...
Page 141
... POLYIMIDE FILMS S. T. CHEN IBM Semiconductor Research and Development Center P.O. Box 218 , Yorktown Heights , NY 10598 INTRODUCTION In recent years , polyimide film has become a commonly used insulator for microelectronic devices ...
... POLYIMIDE FILMS S. T. CHEN IBM Semiconductor Research and Development Center P.O. Box 218 , Yorktown Heights , NY 10598 INTRODUCTION In recent years , polyimide film has become a commonly used insulator for microelectronic devices ...
Page 142
... polyimide film between 20 ° C to 400 ° C . Since the glass transition temperature is above 400 ° C , the curve does not show a large slope change in this temperature range . The CTE of PMDA - ODA film is more isotropic than BPDA - PDA film ...
... polyimide film between 20 ° C to 400 ° C . Since the glass transition temperature is above 400 ° C , the curve does not show a large slope change in this temperature range . The CTE of PMDA - ODA film is more isotropic than BPDA - PDA film ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch