Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 135
DIELECTRIC PROPERTIES OF LOW DIELECTRIC CONSTANT POLYMERIC MATERIALS Flora S. Ip * and Chiu Ting ** SEMATECH 2706 Montopolis Dr. , Austin TX 78741 9 * On Assignment from Advanced Micro Devices , Austin , TX ** On Assignment from Intel ...
DIELECTRIC PROPERTIES OF LOW DIELECTRIC CONSTANT POLYMERIC MATERIALS Flora S. Ip * and Chiu Ting ** SEMATECH 2706 Montopolis Dr. , Austin TX 78741 9 * On Assignment from Advanced Micro Devices , Austin , TX ** On Assignment from Intel ...
Page 139
CONCLUSIONS In comparing 3.0 dielectric constant polymeric materials with traditional PETEOS SiO2 ' for ILD applications , polymeric materials have over 32.5 % of intra - line capacitance improvement at 0.6 um gap and 0.65 um metal ...
CONCLUSIONS In comparing 3.0 dielectric constant polymeric materials with traditional PETEOS SiO2 ' for ILD applications , polymeric materials have over 32.5 % of intra - line capacitance improvement at 0.6 um gap and 0.65 um metal ...
Page 138
Cross - sectional SEM of Intra - line Capacitance Test Structure Filled with Hitachi SOG Low k material . From the simulation calculation , in - plane dielectric constant of the eight polymeric materials are summarized in table 1 .
Cross - sectional SEM of Intra - line Capacitance Test Structure Filled with Hitachi SOG Low k material . From the simulation calculation , in - plane dielectric constant of the eight polymeric materials are summarized in table 1 .
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |