Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
From inside the book
Results 1-3 of 85
Page 48
... polymerization of naphthalene using a composite electrolyte of aluminum chloride and cuprous chloride ( 9 ) . Bergman's study on the thermal cycloaromatization of enediynes led to the suggestion of a benzene 1,4 - radical intermediate ...
... polymerization of naphthalene using a composite electrolyte of aluminum chloride and cuprous chloride ( 9 ) . Bergman's study on the thermal cycloaromatization of enediynes led to the suggestion of a benzene 1,4 - radical intermediate ...
Page 51
... polymerization of a variety of diisopropenyl aromatic monomers . Typically , polymerization proceeds rapidly under UV irradiation catalyzed by diaryliodonium salt photoinitiators to give hard , transparent films . Investigations have ...
... polymerization of a variety of diisopropenyl aromatic monomers . Typically , polymerization proceeds rapidly under UV irradiation catalyzed by diaryliodonium salt photoinitiators to give hard , transparent films . Investigations have ...
Page 102
... Polymer - N = C = O + t.Bu - OH + CO2 NH2 - Polymer Polymer - NH - CO - NH - Polymer Figure 6. Mechanism of chain extension by the formation of urea linkages . This assumption was supported by the typical ' H NMR spectra which are ...
... Polymer - N = C = O + t.Bu - OH + CO2 NH2 - Polymer Polymer - NH - CO - NH - Polymer Figure 6. Mechanism of chain extension by the formation of urea linkages . This assumption was supported by the typical ' H NMR spectra which are ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
21 other sections not shown
Other editions - View all
Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch