Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 48
... polymers is depicted in Scheme 2. Although these monomers , 1,2- diethynylbenzene ( IA ) or 1,2 - diethynyltetrafluorobenzene ( IB ) are thermodynamically labile , especially when the polymerization is carried out in a sealed tube ...
... polymers is depicted in Scheme 2. Although these monomers , 1,2- diethynylbenzene ( IA ) or 1,2 - diethynyltetrafluorobenzene ( IB ) are thermodynamically labile , especially when the polymerization is carried out in a sealed tube ...
Page 51
... polymerization of a variety of diisopropenyl aromatic monomers . Typically , polymerization proceeds rapidly under UV irradiation catalyzed by diaryliodonium salt photoinitiators to give hard , transparent films . Investigations have ...
... polymerization of a variety of diisopropenyl aromatic monomers . Typically , polymerization proceeds rapidly under UV irradiation catalyzed by diaryliodonium salt photoinitiators to give hard , transparent films . Investigations have ...
Page 57
... polymerization occurred within 20-60 seconds exposure to a 300 W unfiltered medium pressure Hg arc lamp . After photopolymerization , the polymers 2-8 are soluble in common solvents such as CHC13 , acetone and ethyl acetate further ...
... polymerization occurred within 20-60 seconds exposure to a 300 W unfiltered medium pressure Hg arc lamp . After photopolymerization , the polymers 2-8 are soluble in common solvents such as CHC13 , acetone and ethyl acetate further ...
Contents
Methods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured decrease density device dielectric film dielectric properties electrode electromigration FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology TEOS/O test structure thermal stability thin films ULSI vapor deposition wet etch