Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Results 1-3 of 88
Page 123
... polymers that have dielectric constant values ranging from 2.0 to 3.0 offer attractive alternatives to SiO2 . However , it has been a great challenge to find organic polymers with thermal stability up to 450 ° C . We have characterized ...
... polymers that have dielectric constant values ranging from 2.0 to 3.0 offer attractive alternatives to SiO2 . However , it has been a great challenge to find organic polymers with thermal stability up to 450 ° C . We have characterized ...
Page 125
... polymer samples . The hardness and modulus values are plotted in Figure 8 and 9. The largest hardness value for polymers does not exceed 1 GPa . Compared to thermal oxide's 12 GPa , organic polymers are much softer , having a lower ...
... polymer samples . The hardness and modulus values are plotted in Figure 8 and 9. The largest hardness value for polymers does not exceed 1 GPa . Compared to thermal oxide's 12 GPa , organic polymers are much softer , having a lower ...
Page 230
... polymers used in this investigation are known to have different hardness , which is expected to affect CMP behavior . Parylene - n ( PA ) is a vapor deposited soft polymer whose hardness can be changed by a curing step . An anneal at ...
... polymers used in this investigation are known to have different hardness , which is expected to affect CMP behavior . Parylene - n ( PA ) is a vapor deposited soft polymer whose hardness can be changed by a curing step . An anneal at ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch