Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Results 1-3 of 12
Page 262
... pore sizes really smaller than microelectronics features , 2 ) what are the mechanical properties of these materials , 3 ) what is the thermal stability of these materials . Figure 2 illustrates the pore size problem for a porous solid ...
... pore sizes really smaller than microelectronics features , 2 ) what are the mechanical properties of these materials , 3 ) what is the thermal stability of these materials . Figure 2 illustrates the pore size problem for a porous solid ...
Page 263
... pore size for silica with density and surface area . Experimental data from Table 1 . RESULTS AND DISCUSSION for 1.5 hours at 70 ° C . In the second step , the stock solution was diluted to 70 vol . % with ethanol , followed by addition ...
... pore size for silica with density and surface area . Experimental data from Table 1 . RESULTS AND DISCUSSION for 1.5 hours at 70 ° C . In the second step , the stock solution was diluted to 70 vol . % with ethanol , followed by addition ...
Page 266
... pores , controlling pore surface chemistry for electrical properties and to minimize adsorption / outgassing , and developing rapid reproducible processing techniques , which can be easily integrated into existing microelectronics ...
... pores , controlling pore surface chemistry for electrical properties and to minimize adsorption / outgassing , and developing rapid reproducible processing techniques , which can be easily integrated into existing microelectronics ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch