Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 72
... Precursor Polymer PMDA - BPDA / PDA Alternating Copolyimide Fig.1 . Synthesis scheme of a new diamine and its polyimide precursor , alternating copolyimide precursor : ROH , isopropyl alcohol ; PDA , p - phenylene diamine ...
... Precursor Polymer PMDA - BPDA / PDA Alternating Copolyimide Fig.1 . Synthesis scheme of a new diamine and its polyimide precursor , alternating copolyimide precursor : ROH , isopropyl alcohol ; PDA , p - phenylene diamine ...
Page 73
... precursor solutions were filtered , tightly sealed , and stored in a refrigerator before use . Precursor solutions were cast on glass slides using a spin - coater or a doctor blade and followed by drying on a hotplate at 80 ° C for 3 h ...
... precursor solutions were filtered , tightly sealed , and stored in a refrigerator before use . Precursor solutions were cast on glass slides using a spin - coater or a doctor blade and followed by drying on a hotplate at 80 ° C for 3 h ...
Page 74
... precursor polymers are still sensitive to water and temperature , owing to the amic acid linkages in the equilibration of monomer - precursor . However , in comparison with conventional poly ( amic acid ) s alternating copolyimide ...
... precursor polymers are still sensitive to water and temperature , owing to the amic acid linkages in the equilibration of monomer - precursor . However , in comparison with conventional poly ( amic acid ) s alternating copolyimide ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch