Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 72
... precursors were synthesized and thermally converted to the alternating copolyimides in thin films . The structure and properties ( namely , TEC and mechanical properties ) of alternating copolyimide films were characterized . The film ...
... precursors were synthesized and thermally converted to the alternating copolyimides in thin films . The structure and properties ( namely , TEC and mechanical properties ) of alternating copolyimide films were characterized . The film ...
Page 73
... precursors of three different alternating copolyimides were synthesized in NMP ( ca. 10 wt % solid content ) : poly [ ( p - phenylene pyromellitamic diisopropyl ester ) -alt- ( p- phenylene biphenyltetracarboxamic acid ) ] ( PMDA - BPDA ...
... precursors of three different alternating copolyimides were synthesized in NMP ( ca. 10 wt % solid content ) : poly [ ( p - phenylene pyromellitamic diisopropyl ester ) -alt- ( p- phenylene biphenyltetracarboxamic acid ) ] ( PMDA - BPDA ...
Page 256
... precursors on silicon wafers and curing them in a furnace . We show here the major solvents in the precursors and the cure conditions . All recommendations from suppliers were followed . type of SOG ( a ) ( b ) ( c ) ( d ) major ...
... precursors on silicon wafers and curing them in a furnace . We show here the major solvents in the precursors and the cure conditions . All recommendations from suppliers were followed . type of SOG ( a ) ( b ) ( c ) ( d ) major ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch