Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 95
... pressure . The residual water and some xylene were evaporated at 30 ̊C under a partial pressure of 20 mm Hg for 7 hours , leading to a water - free solution of PPQ 4 having a viscosity of 5 Pa s , which was reduced to 1.5 Pa s by adding ...
... pressure . The residual water and some xylene were evaporated at 30 ̊C under a partial pressure of 20 mm Hg for 7 hours , leading to a water - free solution of PPQ 4 having a viscosity of 5 Pa s , which was reduced to 1.5 Pa s by adding ...
Page 240
... pressure chemical vapor deposition ( APCVD ) using tetraethoxysilane ( TEOS ) and ozone ( O3 ) as gas sources . Furthermore , instability of Si - F bonds to moisture will also be described . EXPERIMENTAL PROCEDURE Sample Preparation ...
... pressure chemical vapor deposition ( APCVD ) using tetraethoxysilane ( TEOS ) and ozone ( O3 ) as gas sources . Furthermore , instability of Si - F bonds to moisture will also be described . EXPERIMENTAL PROCEDURE Sample Preparation ...
Page 250
... pressure was less than 10 Torr and the deposition pressure ranged from 1 to 2 mTorr . 6 - inch SiO2 / Si ( 100 ) and Al / Si ( 100 ) wafers were used as substrates ; they were mounted on a substrate holder cooled by water and He gas ...
... pressure was less than 10 Torr and the deposition pressure ranged from 1 to 2 mTorr . 6 - inch SiO2 / Si ( 100 ) and Al / Si ( 100 ) wafers were used as substrates ; they were mounted on a substrate holder cooled by water and He gas ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch