Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 130
... properties . Dielectric properties are assumed to be constant with temperature , though in reality they will surely be temperature dependent . Furthermore , dielectrics are assumed to be either purely elastic or elastic- perfectly ...
... properties . Dielectric properties are assumed to be constant with temperature , though in reality they will surely be temperature dependent . Furthermore , dielectrics are assumed to be either purely elastic or elastic- perfectly ...
Page 135
... properties of a wide variety of promising low dielectric polymeric materials for ILD applications . This paper presents capacitance values measured over a wide range of temperature , and a summary of the measured dielectric properties ...
... properties of a wide variety of promising low dielectric polymeric materials for ILD applications . This paper presents capacitance values measured over a wide range of temperature , and a summary of the measured dielectric properties ...
Page 141
... properties of a microelectronic material . Thermal and mechanical properties play very important roles in terms of determining the device structural integrity . Mismatch of material properties could cause feasibility and reliability ...
... properties of a microelectronic material . Thermal and mechanical properties play very important roles in terms of determining the device structural integrity . Mismatch of material properties could cause feasibility and reliability ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch