Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 48
... reaction rate of poly ( fluorinated naphthalene ) is faster than poly ( naphthalene ) under the same reaction conditions , which might be an important factor when it is necessary to grow a thicker film in a short period of time . Poly ...
... reaction rate of poly ( fluorinated naphthalene ) is faster than poly ( naphthalene ) under the same reaction conditions , which might be an important factor when it is necessary to grow a thicker film in a short period of time . Poly ...
Page 112
... reaction was monitored via FT - IR by following the disappearance of the Si - H absorption peak ( 2171 cm31 ) . Preparation of the fluoroaliphatic dicyanate ester ( CE ) monomers proceeds by the reaction of the corresponding diol with ...
... reaction was monitored via FT - IR by following the disappearance of the Si - H absorption peak ( 2171 cm31 ) . Preparation of the fluoroaliphatic dicyanate ester ( CE ) monomers proceeds by the reaction of the corresponding diol with ...
Page 252
... reaction was enhanced . At more than 96 % CF , in the feed gases , the etching reaction was stronger than the deposition , and no film grew . The leakage current of the a - C : H films was 108 A / cm2 at 1 MV / cm , and was suppressed ...
... reaction was enhanced . At more than 96 % CF , in the feed gases , the etching reaction was stronger than the deposition , and no film grew . The leakage current of the a - C : H films was 108 A / cm2 at 1 MV / cm , and was suppressed ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch