Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 4
... reducing interconnect capacitance can reduce the power consumption . Recent analysis showed that the power ... reduce the interconnect capacitance in order to maintain the trend of reduced delay time , reduced power consumption ...
... reducing interconnect capacitance can reduce the power consumption . Recent analysis showed that the power ... reduce the interconnect capacitance in order to maintain the trend of reduced delay time , reduced power consumption ...
Page 117
... reduce power dissipation , crosstalk and RC delays in interconnects . Curing is essential after deposition of these materials to initiate polymerization reactions and form films of desirable electrical properties . For high performance ...
... reduce power dissipation , crosstalk and RC delays in interconnects . Curing is essential after deposition of these materials to initiate polymerization reactions and form films of desirable electrical properties . For high performance ...
Page 122
... reduces thermal stress , and the use of VUV photons modifies the microstructural arrangement within the polyimide film to reduce the intrinsic stress . This reduces the density of defects and traps , all of which reduce the leakage ...
... reduces thermal stress , and the use of VUV photons modifies the microstructural arrangement within the polyimide film to reduce the intrinsic stress . This reduces the density of defects and traps , all of which reduce the leakage ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch