Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 6
For a given operating voltage , reducing interconnect capacitance can reduce the
power consumption . ... It is , therefore , essential to reduce the interconnect
capacitance in order to maintain the trend of reduced delay time , reduced power
...
For a given operating voltage , reducing interconnect capacitance can reduce the
power consumption . ... It is , therefore , essential to reduce the interconnect
capacitance in order to maintain the trend of reduced delay time , reduced power
...
Page 117
84 reduce power dissipation , crosstalk and RC delays in interconnects . Curing
is essential after deposition of these materials to initiate polymerization reactions
and formi films of desirable electrical properties . For high performance and ...
84 reduce power dissipation , crosstalk and RC delays in interconnects . Curing
is essential after deposition of these materials to initiate polymerization reactions
and formi films of desirable electrical properties . For high performance and ...
Page 122
As mentioned earlier , lower temperature processing reduces thermal stress , and
the use of VUV photons modifies the microstructural arrangement within the
polyimide film to reduce the intrinsic stress . This reduces the density of defects
and ...
As mentioned earlier , lower temperature processing reduces thermal stress , and
the use of VUV photons modifies the microstructural arrangement within the
polyimide film to reduce the intrinsic stress . This reduces the density of defects
and ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers