Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Results 1-3 of 17
Page 82
... removal , curing and densification of the copolymer . The second step involves the thermolysis of the labile block by heating the copolymer under appropriate conditions to effect the thermolysis and removal of the labile block . In the ...
... removal , curing and densification of the copolymer . The second step involves the thermolysis of the labile block by heating the copolymer under appropriate conditions to effect the thermolysis and removal of the labile block . In the ...
Page 183
... removal of the abraded material from the vicinity of the surface . The abraded material can be copper , copper oxides or even other compounds of copper forming the surface film that is dislodged by the abrasive action . The removal of ...
... removal of the abraded material from the vicinity of the surface . The abraded material can be copper , copper oxides or even other compounds of copper forming the surface film that is dislodged by the abrasive action . The removal of ...
Page 231
... removed after a maximum of 10 minutes . Since at least 60 minutes passed between polishing and measurements of thickness , the thickness change measured after polishing can be fully attributed to removal of the polymer by polishing ...
... removed after a maximum of 10 minutes . Since at least 60 minutes passed between polishing and measurements of thickness , the thickness change measured after polishing can be fully attributed to removal of the polymer by polishing ...
Contents
Methods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured decrease density device dielectric film dielectric properties electrode electromigration FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology TEOS/O test structure thermal stability thin films ULSI vapor deposition wet etch