Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page ix
In addition to the fluorinated and nano - foam polyimides , novel low - dielectric constant materials that can be either vapor deposited or photocurable were reported . Strategies to lower the dielectric constant of the conventional ...
In addition to the fluorinated and nano - foam polyimides , novel low - dielectric constant materials that can be either vapor deposited or photocurable were reported . Strategies to lower the dielectric constant of the conventional ...
Page 46
The reported thermal stability of Teflon AF ( 1600 ) is only 360 ° C in air . a Parylene - F - Hot Wall Vapor Deposition Hot ... recently a new synthetic route to octafluoro [ 2.2 ] paracyclophane has been reported by Dolbier ( 3 ) .
The reported thermal stability of Teflon AF ( 1600 ) is only 360 ° C in air . a Parylene - F - Hot Wall Vapor Deposition Hot ... recently a new synthetic route to octafluoro [ 2.2 ] paracyclophane has been reported by Dolbier ( 3 ) .
Page 80
A a hexafluoroisopropylidene linkages with a dielectric constant of 2.6 and Auman and Trofimenko4.5 have reported the synthesis of a number of polyimides based upon the fluorinated rigid cyclic dianhydrides , 6FXDA and 3FXDA ...
A a hexafluoroisopropylidene linkages with a dielectric constant of 2.6 and Auman and Trofimenko4.5 have reported the synthesis of a number of polyimides based upon the fluorinated rigid cyclic dianhydrides , 6FXDA and 3FXDA ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |