Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Results 1-3 of 19
Page 123
... requirements for interconnect systems are becoming more stringent . Dielectric films contribute to the capacitance of the interconnect system . Lowering the dielectric constant ( K ) of the ILD film can improve interconnect performance ...
... requirements for interconnect systems are becoming more stringent . Dielectric films contribute to the capacitance of the interconnect system . Lowering the dielectric constant ( K ) of the ILD film can improve interconnect performance ...
Page 218
... requirements are less stringent than those reported for polyimide substitution for a W via fill , and a planarization module for polyimide to enable a four level metal technology ' . Our process requirements are summarized in Table I ...
... requirements are less stringent than those reported for polyimide substitution for a W via fill , and a planarization module for polyimide to enable a four level metal technology ' . Our process requirements are summarized in Table I ...
Page 239
... requirements : ( 1 ) a low dielectric constant , ( 2 ) a high planarization capability , ( 3 ) a high capability for narrow gap filling , and ( 4 ) a low deposition temperature for low residual stress . To satisfy these requirements ...
... requirements : ( 1 ) a low dielectric constant , ( 2 ) a high planarization capability , ( 3 ) a high capability for narrow gap filling , and ( 4 ) a low deposition temperature for low residual stress . To satisfy these requirements ...
Contents
Methods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured decrease density device dielectric film dielectric properties electrode electromigration FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology TEOS/O test structure thermal stability thin films ULSI vapor deposition wet etch