Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 16
SUMMARY The need for low k dielectric to meet the interconnect performance
requirements of future device generations have been identified . A broad survey
revealed many promising candidate materials . With industrial wide participation ,
a ...
SUMMARY The need for low k dielectric to meet the interconnect performance
requirements of future device generations have been identified . A broad survey
revealed many promising candidate materials . With industrial wide participation ,
a ...
Page 218
Process Requirements The interconnect technology required for our application
uses either a tungsten via-fill capability or ... Our requirements are less stringent
than those reported for polyimide substitution for a W via fill6, and a planarization
...
Process Requirements The interconnect technology required for our application
uses either a tungsten via-fill capability or ... Our requirements are less stringent
than those reported for polyimide substitution for a W via fill6, and a planarization
...
Page 220
Adhesion promoter is required for adhesion of polyimide to inorganic dielectrics
or Si . Al ( Cu ) ... Planarization Unit process development started with examining
the planarization requirements for photolithography at via and M2 layers .
Adhesion promoter is required for adhesion of polyimide to inorganic dielectrics
or Si . Al ( Cu ) ... Planarization Unit process development started with examining
the planarization requirements for photolithography at via and M2 layers .
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers