Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 93
The requirements for electronic applications are a high glass transition
temperature , a low coefficient of thermal expansion , a low dielectric constant ,
and good planarizing properties . Some heterocyclic polymers exhibit
outstanding ...
The requirements for electronic applications are a high glass transition
temperature , a low coefficient of thermal expansion , a low dielectric constant ,
and good planarizing properties . Some heterocyclic polymers exhibit
outstanding ...
Page 205
35 Other gains from low dielectric materials , not captured in the Table I are : ( a )
lower transmission line power requirement , ( b ) lower interconnect power
requirement ( c ) higher wiring density , and ( d ) lower cross - talk . A significant
option ...
35 Other gains from low dielectric materials , not captured in the Table I are : ( a )
lower transmission line power requirement , ( b ) lower interconnect power
requirement ( c ) higher wiring density , and ( d ) lower cross - talk . A significant
option ...
Page 218
Our requirements are less stringent than those reported for polyimide substitution
for a W via fill6, and a planarization module for polyimide to enable a four level
metal technology7. Our process requirements are summarized in Table I. Table I:
...
Our requirements are less stringent than those reported for polyimide substitution
for a W via fill6, and a planarization module for polyimide to enable a four level
metal technology7. Our process requirements are summarized in Table I. Table I:
...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers