Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
From inside the book
Results 1-3 of 23
Page 240
... respectively . Bubbler temperatures for FTES and FTNPS were 30 and 90 ° C , respectively . These bubbling temperatures provide a constant partial pressure of 5 torr in the chamber . Bubbling temperature for pure water was 40 ° C , and ...
... respectively . Bubbler temperatures for FTES and FTNPS were 30 and 90 ° C , respectively . These bubbling temperatures provide a constant partial pressure of 5 torr in the chamber . Bubbling temperature for pure water was 40 ° C , and ...
Page 244
... respectively . Figure 3 ( a ) and ( b ) show SEM cross - sectional views of the LPD - SIO , films deposited on the whole surfaces of substrates with poly - silicon and Al wiring patterns , respectively . The LPD - SiO2 films were ...
... respectively . Figure 3 ( a ) and ( b ) show SEM cross - sectional views of the LPD - SIO , films deposited on the whole surfaces of substrates with poly - silicon and Al wiring patterns , respectively . The LPD - SiO2 films were ...
Page 280
... respectively . The sample was set on the heated susceptor between 200 and 400 ° C . For comparison , conventional cure of SOG film was performed for 60 min at 425 ° C in a N2 purged diffusion furnace . The SOG film loses up to 10 % of ...
... respectively . The sample was set on the heated susceptor between 200 and 400 ° C . For comparison , conventional cure of SOG film was performed for 60 min at 425 ° C in a N2 purged diffusion furnace . The SOG film loses up to 10 % of ...
Contents
Methods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
30 other sections not shown
Other editions - View all
Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured decrease density device dielectric film dielectric properties electrode electromigration FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology TEOS/O test structure thermal stability thin films ULSI vapor deposition wet etch