Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 225
... RF etch effect is also shown in 7b where higher RF power provides a lower via chain resistance . Note the same signature is apparent in 7a but is not designated on the plot ( 17 low RF , 18 high RF ) . Another example of difficulties ...
... RF etch effect is also shown in 7b where higher RF power provides a lower via chain resistance . Note the same signature is apparent in 7a but is not designated on the plot ( 17 low RF , 18 high RF ) . Another example of difficulties ...
Page 250
... rf power , while the lower electrode was grounded . 4 - inch SiO / Si ( 100 ) and p * Si ( 100 ) wafers were used as substrates . The temperature of the substrates during deposition was typically kept at around 50 ° C . The substrates ...
... rf power , while the lower electrode was grounded . 4 - inch SiO / Si ( 100 ) and p * Si ( 100 ) wafers were used as substrates . The temperature of the substrates during deposition was typically kept at around 50 ° C . The substrates ...
Page 251
... rf power [ W ] Fig . 1. Dielectric constant of the a - C : H films deposited with CH , on the both grounded and powered electrode of parallel - plate reactor as a function of rf power . 20 40 60 80 100 CF ( CH + CF ) [ % ] Fig . 2 ...
... rf power [ W ] Fig . 1. Dielectric constant of the a - C : H films deposited with CH , on the both grounded and powered electrode of parallel - plate reactor as a function of rf power . 20 40 60 80 100 CF ( CH + CF ) [ % ] Fig . 2 ...
Contents
Methods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured decrease density device dielectric film dielectric properties electrode electromigration FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology TEOS/O test structure thermal stability thin films ULSI vapor deposition wet etch