Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 148
The energy resolution was set at 200 eV around Cu Ką . The samples were annealed at 130 -140 ° C for two hours at 6.5x 10 -3 Pa and cooled at 2 ° C / minute to room temperature . Measurements were made also in vacuum ( 1.3x104 to ...
The energy resolution was set at 200 eV around Cu Ką . The samples were annealed at 130 -140 ° C for two hours at 6.5x 10 -3 Pa and cooled at 2 ° C / minute to room temperature . Measurements were made also in vacuum ( 1.3x104 to ...
Page 157
MICROME TER HEAD MICROMETER MOUNT SPACING NUT CASE COMPRESSION SPRING UPPER ELECTRODE FUSED SILICA SUPPORT CONNECTORS LOWER ELECTRODE Figure 2 : Capacitance dielectrometer In this method the decay of a laser pulse impinging on sample is ...
MICROME TER HEAD MICROMETER MOUNT SPACING NUT CASE COMPRESSION SPRING UPPER ELECTRODE FUSED SILICA SUPPORT CONNECTORS LOWER ELECTRODE Figure 2 : Capacitance dielectrometer In this method the decay of a laser pulse impinging on sample is ...
Page 275
4 The characteristics of a sample grown in 10 mTorr H2 is also shown . ... hydrogen as a function of circles indicate the mean of laser energy density . several measurements on one or two different samples at each deposition condition .
4 The characteristics of a sample grown in 10 mTorr H2 is also shown . ... hydrogen as a function of circles indicate the mean of laser energy density . several measurements on one or two different samples at each deposition condition .
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |