Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 148
... samples with initial thickness below 400 Å . The results of a 497 Å sample ( Figure 1 ) indicate a slight upturn of the expansion coefficient , and this upturn becomes more evident as the initial film thickness increases . The 1988 Å sample ...
... samples with initial thickness below 400 Å . The results of a 497 Å sample ( Figure 1 ) indicate a slight upturn of the expansion coefficient , and this upturn becomes more evident as the initial film thickness increases . The 1988 Å sample ...
Page 157
... sample plane . The difficulty with these measurements resides in minimizing fringing field effects . The fringe field is usually partially eliminated by measuring the capacitance with and without sample and subtracting the results ...
... sample plane . The difficulty with these measurements resides in minimizing fringing field effects . The fringe field is usually partially eliminated by measuring the capacitance with and without sample and subtracting the results ...
Page 275
... samples at each deposition condition . The error bars reflect the total variation in measured dielectric constants for a particular sample deposition condition , not the error associated with each measurement of the dielectric constant ...
... samples at each deposition condition . The error bars reflect the total variation in measured dielectric constants for a particular sample deposition condition , not the error associated with each measurement of the dielectric constant ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch