Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 251
... sccm powered electrode grounded electrode 0 50 100 150 200 deposition rate [ nm / min ] 40 30 20- 10 powered electrode total flow rate 50 sccm RF 200 W 5 ་ ♡ 2 dielectric constant rf power [ W ] Fig . 1. Dielectric constant of the a ...
... sccm powered electrode grounded electrode 0 50 100 150 200 deposition rate [ nm / min ] 40 30 20- 10 powered electrode total flow rate 50 sccm RF 200 W 5 ་ ♡ 2 dielectric constant rf power [ W ] Fig . 1. Dielectric constant of the a ...
Page 252
... sccm . The films were also peeled off without inserting the thin a - C : H buffer layer between the substrate and the a - C : F film . Figure 4 shows the deposition rate of the a - C : F films as a function of H , flow rate at an rf ...
... sccm . The films were also peeled off without inserting the thin a - C : H buffer layer between the substrate and the a - C : F film . Figure 4 shows the deposition rate of the a - C : F films as a function of H , flow rate at an rf ...
Page 253
... sccm CF , 100 sccm 0 20 40 60 80 100 H2 flow rate [ sccm ] Fig . 4. Deposition rate of a - C : F films as a function of H , flow rate . RF source power was 2kW . helicon 60 C2F CF 4 thickness ( after anneal / as - deposited ) [ % ] 20 ...
... sccm CF , 100 sccm 0 20 40 60 80 100 H2 flow rate [ sccm ] Fig . 4. Deposition rate of a - C : F films as a function of H , flow rate . RF source power was 2kW . helicon 60 C2F CF 4 thickness ( after anneal / as - deposited ) [ % ] 20 ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch