Low-dielectric Constant Materials |
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Page 119
or 400° C using one of the lamp configurations shown in figure 1 . Two other
samples were cured in a furnace at 300° C and 400 0 C. Atmospheric pressure, a
nitrogen ambient, and a cure time of 1 5 minutes was maintained for each of the ...
or 400° C using one of the lamp configurations shown in figure 1 . Two other
samples were cured in a furnace at 300° C and 400 0 C. Atmospheric pressure, a
nitrogen ambient, and a cure time of 1 5 minutes was maintained for each of the ...
Page 211
Figure 9. A four layer Cu/PA (stripline) test structure. The test structures were
evaluated electrically using Time Domain Reflectometry (TDR). The transmitted
waveforms for a ustripline (four layer) Al/PA structure are shown in Figure 10;
stripline ...
Figure 9. A four layer Cu/PA (stripline) test structure. The test structures were
evaluated electrically using Time Domain Reflectometry (TDR). The transmitted
waveforms for a ustripline (four layer) Al/PA structure are shown in Figure 10;
stripline ...
Page 233
It is pointed out that during our evaluations of the polymer surface we invariably
found defects on the polished surface of the spun on polymers (BCB and FP).
These defects are shown in figure 5. The defects shown in fig. 5a were seen in
BCB ...
It is pointed out that during our evaluations of the polymer surface we invariably
found defects on the polished surface of the spun on polymers (BCB and FP).
These defects are shown in figure 5. The defects shown in fig. 5a were seen in
BCB ...
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Contents
Methods and Needs for Low K Material Research | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
23 other sections not shown
Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1995 Materials Research a-tC alternating copolyimide anisotropy annealing applications bond BPDA-PDA bulk c-BN capacitance chemical chemical vapor deposition coating copolymers copper cured decrease density device dianhydride dielectric film dielectric materials dielectric properties electromigration electronic film thickness films deposited fluorinated polyimide foamed frequency FTIR glass transition temperature h-BN helicon reactor imide in-plane increase insulating integrated circuits interlayer dielectric ISBN labile block layer low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics micron microwave modulus monomers Multilevel Interconnection organic polymers oxide Parylene patterns permittivity photoresist planarization plasma plasma treatment polish rate polyimide film polymerization pore precursor Proc refractive index Rensselaer Polytechnic Institute RTCVD-SiOF sample shown in Figure silica aerogels silicon wafers siloxane SiO2 SiO2 films slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology test structure thermal stability thin films ULSI vapor deposition VLSI
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Author | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| Export Citation | BiBTeX EndNote RefMan |