Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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or 400 ° C using one of the lamp configurations shown in figure 1. Two other samples were cured in a furnace at 300 ° C and 400 ° C. Atmospheric pressure , a nitrogen ambient , and a cure time of 15 minutes was maintained for each of ...
or 400 ° C using one of the lamp configurations shown in figure 1. Two other samples were cured in a furnace at 300 ° C and 400 ° C. Atmospheric pressure , a nitrogen ambient , and a cure time of 15 minutes was maintained for each of ...
Page 211
The transmitted waveforms for a ustripline ( four layer ) Al / PA structure are shown in Figure 10 ; stripline ( two layer ) Al / PA structure are shown in Figure 11 ; ustripline ( four layer ) Cu / PA structure shown in Figure 12 ...
The transmitted waveforms for a ustripline ( four layer ) Al / PA structure are shown in Figure 10 ; stripline ( two layer ) Al / PA structure are shown in Figure 11 ; ustripline ( four layer ) Cu / PA structure shown in Figure 12 ...
Page 253
Fig . 5. The thickness of the aC : F films a function of annealing temperature . as 6 reactor due to the high helicon plasma density . The higher deposition rate of ... The XPS spectra of the films are shown in figure 3 ( c ) , ( d ) .
Fig . 5. The thickness of the aC : F films a function of annealing temperature . as 6 reactor due to the high helicon plasma density . The higher deposition rate of ... The XPS spectra of the films are shown in figure 3 ( c ) , ( d ) .
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |