Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 167
Optical images of selected wafers were taken and recorded using the previously
described imaging system using a 39x magnification and are shown in Figures 3
- 5 . RESULTS AND DISCUSSION In general , defect free DVS - bisBCB thin ...
Optical images of selected wafers were taken and recorded using the previously
described imaging system using a 39x magnification and are shown in Figures 3
- 5 . RESULTS AND DISCUSSION In general , defect free DVS - bisBCB thin ...
Page 210
Initial attempts at CMP polishing the metal / PA system have been attempted and
show reasonable promise . A proposed scheme is shown in Figure 7 . Parylene
Metal Polish Stop Parylene Si 1 . Deposit Parylene , Etch Parylene using mask .
Initial attempts at CMP polishing the metal / PA system have been attempted and
show reasonable promise . A proposed scheme is shown in Figure 7 . Parylene
Metal Polish Stop Parylene Si 1 . Deposit Parylene , Etch Parylene using mask .
Page 233
These defects are shown in figure 5 . Fig . 5 : Pinhole defect ( a ) and water
absorption defect ( b ) in BCB film , after polishing . The marker shows 0 . 5 mm .
Fig . 5a Fig . 5b The defects shown in fig . 5a were seen in BCB and the ...
These defects are shown in figure 5 . Fig . 5 : Pinhole defect ( a ) and water
absorption defect ( b ) in BCB film , after polishing . The marker shows 0 . 5 mm .
Fig . 5a Fig . 5b The defects shown in fig . 5a were seen in BCB and the ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Export Citation | BiBTeX EndNote RefMan |